دیتاشیت 4N65
مشخصات دیتاشیت
| نام دیتاشیت |
4N65
|
| حجم فایل |
2894.07
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
GOODWORK 4N65
-
Operating Temperature:
+150°C@(Tj)
-
Power Dissipation (Pd):
38W
-
Total Gate Charge (Qg@Vgs):
14.5nC@10V
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
425pF@25V
-
Continuous Drain Current (Id):
4A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
5.8pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.1Ω@10V,2A
-
Package:
TO-252
-
Manufacturer:
GOODWORK
-
Part id:
880074
